AZ5214
AZ5214 Photolithography
AZ5214 Photolithography
1.AMI clean
2.HMDS Prime
3.Spin-coating
3000 rpm->30s
1.6 um thickness
4.Prebake
110 deg.C -> 50s
5.Exposure
vaccum
20 um seperation
pre vac: 10 sec, full vac: 30 sec, vac purge: 10 sec
continous WEC
6.Development
AZ400K : water = 1 (50 ml) : 4 (200 ml), 25 sec – 35 sec. For Yoonho, 28 sec is the gold time. plenty of agitation.
AZ400K : water = 1 (50 ml) : 6 (300 ml), 65 sec – 75 sec. plenty of agitation.
7.March Asher – to remove any PR residue (mild residue)
Run March Asher for 30 secs
Double check the time of the March Asher.